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ST 2SC380
NPN Silicon Epitaxial Planar Transistor
High frequency amplifier application for FM IF, OSC stage and AM CONV. IF stage The transistor is subdivided into three groups R, O, and Y, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 C)
O
TO-92 Plastic Package Weight approx. 0.19g
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE = 12 V, IC = 2 mA Current Gain Group R O Y
Symbol VCBO VCEO VEBO IC -IE Ptot Tj TS
Value 35 30 4 50 50 300 125 -55 to +125
Unit V V V mA mA mW
O
C C
O
Symbol hFE hFE hFE ICBO IEBO VCE(sat) VBE(sat) fT Cob Cc,rbb' Gpe
Min. 40 70 120 100 1.4 10 27
Typ. 2 29
Max. 80 140 240 0.1 0.1 0.4 1 400 3.2 50 33
Unit A A V V MHz pF ps dB
Collector Cutoff Current at VCB = 35 V Emitter Cutoff Current at VEB = 4 V Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Transition Frequency at VCE = 10 V, IC = 1 mA Collector Output Capacitance at VCB = 10 V, f = 1 MHz Collector Base Time Constant at VCE = 10 V, -IE = 1 mA, f = 30 MHz Power Gain at VCC = 6 V, f = 10.7 MHz, -IE = 1 mA
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 06/05/2006
ST 2SC380
10
Ic[mA], COLLECTOR CURRENT
I B=90 A I B=80 A
h FE, DC CURRENT GAIN
1000
VCE=12V
8 6 4 2 0 0 2 4 6
I B=70 A I B=60 A I B=50 A I B=40 A I B=30 A I B=20 A I B=10 A
100
8
10
10 0.1 1 10 100
I C[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
VBE(sat) , VCE(sat) [ V ] , SATURATION VOLTAGE
Figure 2. DC Current Gain
10
Ic=10I B
Ic[mA], COLLECTOR CURRENT
32 28 24 20 16 12 8 4 0 0 0.2 0.4 0.6 0.8 1.0 1.2 VCE=12V
1
VBE(sat)
0.1
VCE(sat)
0.01 0.1
1
10
Ic[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Satruation Voltage
Figure 4. Base-Emitter On Voltage
fT [ MHz ] , CURRENT GAIN BANDWIDTH PRODUCT
10
Cob [ pF ] , CAPACITANCE
1000 VCE=10V
f=1MHz I E=0
1
100
0.1 1 10 100
VCB[V], COLLECTOR BASE VOLTAGE
10
1
10
I C[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 06/05/2006

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